1 publication date: july 2002 sjj00262aed composite transistors XP01878 silicon n-channel mosfet for switching features ? two elements incorporated into one package ? reduction of the mounting area and assembly cost by one half basic part number of element ? 2sk3539 2 elements absolute maximum ratings t a = 25 c unit: mm internal connection electrical characteristics t a = 25 c 3 c parameter symbol conditions min typ max unit drain to source voltage v dss i d = 10 a, v gs = 050 v drain cut-off current i dss v ds = 50 v, v gs = 0 1.0 a gate cut-off current i gss v gs = 7 v, v ds = 0 5 a gate threshold voltage v th i d = 1 a, v ds = 3 v 0.9 1.2 1.5 v drain on-state resistance r ds(on) i d = 10 ma, v gs = 2.5 v 8 15 ? i d = 10 ma, v gs = 4.0 v 6 12 forward transfer admittance ? y fs ? i d = 10 ma, v ds = 4.0 v 20 60 ms input capacitance c iss v ds = 3 v, v gs = 0 v, f = 1 mhz 12 pf output capacitance c oss 7pf reverse transfer capacitance c rss 3pf turn-on time * t on v dd = 3 v, v gs = 0 v to 3 v, r l = 470 ? 200 ns turn-off time * t off v dd = 3 v, v gs = 3 v to 0 v, r l = 470 ? 200 ns marking symbol: al parameter symbol rating unit rating drain to source voltage v dss 50 v of gate to source voltage v gso 7v element drain current i d 100 ma max drain current i dp 200 ma total allowable power dissipation p t 125 mw channel temperature t ch 125 c storage temperature t stg ? 55 to + 125 c 1: gate (fet1) 4: drain (fet2) 2: source 5: drain (fet1) 3: gate (fet2) eiaj: sc-88a smini5-g1 package 2.1 0.1 0.9 +0.2 ?0.1 0.9 0.1 0 to 0.1 1.25 0.10 1 3 2 0.20 0.05 (0.425) 1.3 0.1 2.0 0.1 54 (0.65) (0.65) 0.2 0.1 0.12 +0.05 ?0.02 5? 10? 3 4 fet1 fet2 12 5 note) * : refer to t on , t off test circuit (next page)
XP01878 2 sjj00262aed ? y fs ? ? v gs r ds(on) ? v gs v in ? i o p t ? t a i d ? v ds i d ? v gs ambient temperature t a ( c) allowable power dissipation p t (mw) 160 140 120 100 80 60 40 20 0 20 40 60 80 160 120 100 140 0 0 012 210 48 6 70 60 drain to source voltage v ds ( v ) drain current i d (m a ) 50 40 30 20 10 t a = 25 c v gs = 2.0 v 1.5 v 1.6 v 1.7 v 1.8 v 1.9 v 0 0 3.5 0.5 2.5 3.0 1.0 2.0 1.5 250 gate to source voltage v gs ( v ) drain current i d (m a ) 200 150 100 50 v ds = 3 v t a = ? 25 c 75 c 25 c forward transfer admittance | y fs | (ms) gate to source voltage v gs (v) 0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100 120 140 160 180 v ds = 3 v f = 1 mhz t a = 25 c 0 01234567 60 gate to source voltage v gs ( v ) drain on-state resistance r ds(on) ( ? ) 50 40 30 10 20 i d = 10 ma t a = 75 c ? 25 c 25 c 0.1 1 10 10 100 input voltage v in ( v ) output current i o ( ma ) v o = 5 v t a = 25 c 1 v out v dd = 3 v v gs = 3.0 v t on , t off test circuit 50 ? 470 ? 100 f v in 90% 10% 10% 90% v out t on t off
request for your special attention and precautions in using the technical information and semiconductors described in this material (1) an export permit needs to be obtained from the competent authorities of the japanese government if any of the products or technologies described in this material and controlled under the "foreign exchange and foreign trade law" is to be exported or taken out of japan. (2) the technical information described in this material is limited to showing representative characteris- tics and applied circuits examples of the products. it neither warrants non-infringement of intellec- tual property right or any other rights owned by our company or a third party, nor grants any license. (3) we are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) the products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instru- ments and household appliances). consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? any applications other than the standard applications intended. (5) the products and product specifications described in this material are subject to change without notice for modification and/or improvement. at the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifications satisfy your requirements. (6) when designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage, and heat radiation characteristics. other- wise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) when using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) this material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of matsushita electric industrial co., ltd. 2002 jul
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